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公開日期標題作者
15-五月-1994ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAASCHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-七月-1995BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORLIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-十一月-1995BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPYFENG, MS; FANG, CSA; CHEN, HD; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-六月-1993CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONCHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-六月-1994CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-七月-1993IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONFENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-二月-1994LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONCHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, CC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
5-九月-1994MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, CC; CHANG, CY; CHEN, PA; CHEN, HD; LIN, KC; CHAN, SH; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-四月-1994PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCESCHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
顯示 1 到 9 筆資料，總共 9 筆