Title: CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: CHEN, HD
CHANG, CY
LIN, KC
CHAN, SH
FENG, MS
CHEN, PA
WU, CC
JUANG, FY
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
Issue Date: 1-Jun-1993
Abstract: Heavily carbon-doped GaAs (1 X 10(18) approximately 1 X 10(20) cm-3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CC]4 flow rates. Dopant concentration first increased from 550-degrees-C and reached a maximum at 570-degrees-C growth temperature (T(g)) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at T(g) = 590-degrees-C or less than 40 at T(g) = 630-degrees-C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate Of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2-degrees off toward [110] misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3 X 10(20) cm-3 at T(g) = 580-degrees-C and V/III = 10.
URI: http://dx.doi.org/10.1063/1.353935
http://hdl.handle.net/11536/2989
ISSN: 0021-8979
DOI: 10.1063/1.353935
Journal: JOURNAL OF APPLIED PHYSICS
Volume: 73
Issue: 11
Begin Page: 7851
End Page: 7856
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