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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
1982DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLSWU, CY; CHEN, JF; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-五月-1992THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURECHEN, JF; CHO, AY; 電子物理學系; Department of Electrophysics
15-三月-1992EFFECTS OF SB4/GA RATIOS ON THE ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODESWANG, YH; HOUNG, MP; SZE, PW; CHEN, JF; CHO, AY; 電子物理學系; Department of Electrophysics
15-八月-1993ELECTRICAL AND MICROSTRUCTURAL CHARACTERISTICS OF TI CONTACTS ON (001)SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1995ELECTRICAL-PROPERTIES OF UNDOPED AND SNTE-DOPED GAXIN1-XSB MOLECULAR-BEAM-EPITAXIALLY GROWN ON GAASCHEN, JF; JAW, SH; CHO, AY; 電子物理學系; Department of Electrophysics
1-八月-1992INTERBAND TUNNELING BETWEEN VALENCE-BAND AND CONDUCTION-BAND QUANTUM-WELLS IN A GASB/ALSB/INAS/ALSB/GASB/ALSB/INAS TRIPLE-BARRIER STRUCTURECHEN, JF; CHO, AY; 電子物理學系; Department of Electrophysics
1-四月-1993INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; LUR, W; CHU, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1994INVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB/ALSB/INAS/GASB/ALSB/INAS STRUCTURESWANG, YH; LIU, MH; HOUNG, MP; CHEN, JF; CHO, AY; 電子物理學系; Department of Electrophysics
1-三月-1993MOLECULAR-BEAM EPITAXY GROWTH OF INAS-ALSB-GASB INTERBAND TUNNELING DIODESCHEN, JF; CHO, AY; 電子物理學系; Department of Electrophysics
2-十一月-1992SCHOTTKY-BARRIER HEIGHTS OF THE AMORPHOUS INTERLAYER SI INTERFACES IN TITANIUM THIN-FILMS ON (001)SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1994SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFETWU, SL; LEE, CL; LEI, TF; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1982TEMPERATURE COEFFICIENTS OF THE OPEN-CIRCUIT VOLTAGE OF P-N-JUNCTION SOLAR-CELLSWU, CY; CHEN, JF; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
顯示 1 到 12 筆資料，總共 12 筆