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公開日期標題作者
1-二月-1994ANALYSIS OF BILATERAL LATCH-UP TRIGGERING IN VLSI CIRCUITSHUANG, HS; CHANG, CY; HSU, CC; CHEN, KL; LIN, JK; 電控工程研究所; Institute of Electrical and Control Engineering
1-十一月-1993THE BEHAVIOR OF BILATERAL LATCH-UP TRIGGERING IN VLSI ELECTROSTATIC DISCHARGE DAMAGE PROTECTION CIRCUITSHUANG, HS; CHANG, CY; HSU, CC; CHEN, KL; LIN, JK; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1993CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMSLIN, JK; CHANG, CY; WANG, TH; HUANG, HS; CHEN, KL; HO, TS; KO, J; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-1994NEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENTLIN, JK; CHANG, CY; HUANG, HS; CHEN, KL; KUO, DC; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1994A STUDY ON BILATERAL LATCH-UP SELF-TRIGGERING IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR PROTECTION CIRCUITSHUANG, HS; CHANG, CY; CHEN, KL; LIU, IO; HSU, CC; LIN, JK; 電控工程研究所; Institute of Electrical and Control Engineering
1-六月-1993TRANSIENT AND STEADY-STATE CARRIER TRANSPORT UNDER HIGH-FIELD STRESSES IN SONOS EEPROM DEVICELIN, JK; CHANG, CY; HUANG, HS; HO, TS; CHEN, KL; 電控工程研究所; Institute of Electrical and Control Engineering