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公開日期標題作者
2008CF4-plasma-induced fluorine passivation effects on poly-Si TFTs with high-kappa Pr2O3 gate dielectricChang, Chia-Wen; Huang, Po-Wei; Deng, Chih-Kang; Huang, Jiun-Jia; Chang, Hong-Ren; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Characteristics of Pr2O3 gate dielectric thin-film transistors fabricated on fluorine-ion-implanted polysilicon filmsChang, Chia-Wen; Deng, Chih-Kang; Huang, Jiun-Jia; Chang, Hong-Ren; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2008Characterizing fluorine-ion implant effects on poly-Si thin-film transistors with Pr2O3 gate dielectricChang, Chia-Wen; Deng, Chih-Kang; Wu, Shih-Chieh; Huang, Jiun-Jia; Chang, Hong-Ren; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2008Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantationDeng, Chih-Kang; Chang, Hong-Ren; Chiou, Bi-Shiou; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Improvement of electrical characteristics for fluorine-ion implanted poly-Si TFTs using Pr2O3 gate dielectricChang, Chia-Wen; Huang, Jiun-Jia; Chang, Hong-Ren; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2007A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channelsChang, Chia-Wen; Deng, Chih-Kang; Chang, Hong-Ren; Chang, Che-Lun; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆