標題: | A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels |
作者: | Chang, Chia-Wen Deng, Chih-Kang Chang, Hong-Ren Chang, Che-Lun Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | nanowire (NW);polycrystalline silicon (poly-Si);sidewall spacer;thin-film transistors (TFTs);trigatelike structure |
公開日期: | 1-Nov-2007 |
摘要: | In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a side-wall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications. |
URI: | http://dx.doi.org/10.1109/LED.2007.906808 http://hdl.handle.net/11536/10179 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2007.906808 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 28 |
Issue: | 11 |
起始頁: | 993 |
結束頁: | 995 |
Appears in Collections: | Articles |
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