A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels

標題:	A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels
作者:	Chang, Chia-Wen Deng, Chih-Kang Chang, Hong-Ren Chang, Che-Lun Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	nanowire (NW);polycrystalline silicon (poly-Si);sidewall spacer;thin-film transistors (TFTs);trigatelike structure
公開日期:	1-十一月-2007
摘要:	In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a side-wall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.
URI:	http://dx.doi.org/10.1109/LED.2007.906808 http://hdl.handle.net/11536/10179
ISSN:	0741-3106
DOI:	10.1109/LED.2007.906808
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	28
Issue:	11
起始頁:	993
結束頁:	995
顯示於類別：	期刊論文

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