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Issue DateTitleAuthor(s)
20041.0 nm oxynitride dielectrics prepared by RTP in mixtures of N-2 and O-2 ambientChang, KM; Yang, WC; Chen, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004An alternative process for silicon nanowire fabrication with SPL and wet etching systemChang, KM; You, KS; Lin, JH; Sheu, JT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1997Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen additionChang, KM; Yeh, TH; Deng, IC; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1997Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen additionChang, KM; Yeh, TH; Deng, IC; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2002Anomalous variations of OFF-state leakage current in poly-Si TFT under static stressChang, KM; Chung, YH; Lin, GM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1999Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatmentChang, KM; Deng, IC; Yeh, TH; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Brightness enhancement of ITO/GaN LEDs by self-aligned micro-net structuresChang, KM; Chu, JY; Cheng, CC; Chu, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004The changing effect of N-2/O-2 gas flow rate ratios on ultrathin nitrogen-enriched oxynitride gate dielectricsChang, KM; Yang, WC; Chen, CF; Hung, BF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1998The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrodeChang, KM; Deng, IC; Shih, CW; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1998Characteristics of N2O-grown polyoxide by the recrystallized-polysilicon methodChang, KM; Lee, TC; Sun, YL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1997Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technologyChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2002Characterization of the novel polysilicon TFT with a subgate coupling structureChang, KM; Chung, YH; Deng, CG; Chung, YF; Lin, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1999Comparison of the characteristics of polyoxides grown by thermal, rapid thermal oxidation, and tetraethylorthosilicate deposition methodsChang, KM; Lee, TC; Sun, YL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1996Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidationChang, KM; Li, CH; Fahn, FJ; Yeh, TH; Wang, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1996Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1996Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003EEG alpha blocking correlated with perception of inner light during Zen meditationLo, PC; Huang, ML; Chang, KM; 電控工程研究所; Institute of Electrical and Control Engineering
12-May-1997Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursorChang, KM; Wang, SW; Li, CH; Yeh, TH; Yang, JY; 奈米中心; Nano Facility Center
1-Mar-2001The effect of the growth temperature on polyoxide by rapid thermal processingChang, KM; Lee, TC; Sun, YL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1996Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperatureChang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 79  next >