1. 目前位置：

瀏覽 的方式： 作者 Chang, Kow Ming

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 16 筆資料，總共 16 筆
公開日期標題作者
2014The CeO2 Sensing Membrane in Electrolyte-Insulator-Semiconductor for Bio-Sensor ApplicationsLiu, Che Chun; Lee, Ming Ling; Chang, Kow Ming; Chang, Shan Wei; Chen, Hsiang; Kao, Chyuan Haur; Sung, Wei Kung; Kuo, Min Hau; Chang, Che Wei; Chang, Chia Lun; Lin, Chun Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-2018Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structureLee, Ming Ling; Wang, Jer Chyi; Kao, Chyuan Haur; Chen, Hsiang; Lin, Chan Yu; Chang, Che Wei; Mahanty, Rama Krushna; Lin, Chun Fu; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2015Degradation of AlGaInP light emitting diodes under reverse-bias operations in salty water vaporChen, Hsiang; Chu, Li-Chen; Lee, Ming Ling; Kang, Nai Chung; Shei, Shih-Chang; Chang, Hung Wei; Chu, Yu Cheng; Shen, Huan Yu; Chen, Chin Pang; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Degradation of InGaN/GaN LEDs under Forward-bias Operations in Salty Water VaporChen, Hsiang; Hsieh, Kun Min; He, Yun Yang; Chu, Li Chen; Lee, Ming Ling; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2014Effects of N-2 and O-2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte-insulator-semiconductor structuresKao, Chyuan Haur; Chen, Hsiang; Lee, Ming Ling; Liu, Che Chun; Ueng, Herng-Yih; Chu, Yu Cheng; Chen, Ching Bang; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2015Fabrication and characterization of cobalt nanoparticles on ZnO nanorods on a polished titanium substrateLee, Ming Ling; Chen, Hsiang; Chen, Chin Pang; Chu, Li Chen; Wang, Sheng Hsin; Chen, Chian You; Chen, Yun Ti; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2014High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser AnnealingWu, Chien Hung; Huang, Hau Yuan; Wang, Shui Jinn; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Limitation of low-k reliability due to dielectric breakdown at viasLee, Shou-Chung; Oates, A. S.; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-一月-2005Manufacturing method of thin film transistorChang, Kow Ming; Chung, Yuan Hung
14-五月-2014Multianalyte biosensor based on pH-sensitive ZnO electrolyte-insulator-semiconductor structuresKao, Chyuan Haur; Chen, Hsiang; Lee, Ming Ling; Liu, Che Chun; Ueng, Herng-Yih; Chu, Yu Cheng; Chen, Yu Jie; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory ApplicationsLin, Chih Ju; Lee, Ming Ling; Chang, Kow Ming; Chang, Shan Wei; Chen, Hsiang; Kao, Chyuan Haur; Sung, Wei Kung; Kuo, Min Hau; Chang, Che Wei; Chang, Chia Lun; Lin, Chun Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2007A novel four-mask-step low-temperature polysilicon thin-film transistor with self-aligned raised source/drain (SARSD)Chang, Kow Ming; Lin, Gin Min; Chen, Cheng Guo; Hsieh, Mon Fan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2007Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene processChang, Kow Ming; Lin, Gin Min; Yang, Guo Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2008A novel process for forming an ultra-thin oxynitride film with high nitrogen toppingLai, Chiung Hui; Lin, Bo Chun; Chang, Kow Ming; Hsieh, Kuang Yeu; Lai, Yi Lung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2017Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layerLee, Ming Ling; Chen, Hsiang; Kao, Chyuan Haur; Mahanty, Rama Krushna; Sung, Wei Kung; Lin, Chun Fu; Lin, Chan Yu; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-2017The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectricsLee, Ming Ling; Kao, Chyuan Haur; Chen, Hsiang; Lin, Chan Yu; Chung, Yu Teng; Chang, Kow Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 16 筆資料，總共 16 筆