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顯示 1 到 14 筆資料，總共 14 筆
公開日期標題作者
2005Direct experimental evidence of the hole capture by resonant levels in boron doped siliconYen, ST; Tulupenko, V; Cheng, ES; Dalakyan, A; Lee, CP; Chao, KA; Belykh, V; Abramov, A; Ryzhkov, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-2005Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructuresZakharova, A; Yen, ST; Nilsson, K; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2004Evidence for capture of holes into resonant states in boron-doped siliconYen, ST; Tulupenko, VN; Cheng, ES; Chung, PK; Lee, CP; Dalakyan, AT; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-五月-2003Growth of high-quality Ge epitaxial layers on Si(100)Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA; 材料科學與工程學系; 電子工程學系及電子研究所; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center
15-十二月-2001Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2004Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-七月-2004A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fieldsLapushkin, I; Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2005Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic fieldZakharova, A; Nilsson, K; Chao, KA; Yen, ST; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-九月-2005Spin Hall effect on edge magnetization and electric conductance of a 2D semiconductor stripMal'shukov, AG; Wang, LY; Chu, CS; Chao, KA; 電子物理學系; Department of Electrophysics
1-三月-2006Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc currentZakharova, A; Lapushkin, I; Nilsson, K; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2004Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit couplingChang, CH; Mal'shukov, AG; Chao, KA; 物理研究所; Institute of Physics
1-十二月-2003Spin-current generation and detection in the presence of an ac gateMal'shukov, AG; Tang, CS; Chu, CS; Chao, KA; 電子物理學系; Department of Electrophysics
2-九月-2005Strain-induced coupling of spin current to nanomechanical oscillationsMal'shukov, AG; Tang, CS; Chu, CS; Chao, KA; 電子物理學系; Department of Electrophysics
15-八月-2002Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 14 筆資料，總共 14 筆