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公開日期標題作者
2006Admittance spectroscopy of the electric properties of 1,4-bis[N-(1-naphthyl)-N '-phenylamino]-4,4 ' diamine doped with tungsten oxideHsieh, M. T.; Chang, C. C.; Hu, C. A.; Huang, Y. T.; Yang, S. L.; Chen, J. F.; Hwang, S. W.; Chen, C. H.; 電子物理學系; Department of Electrophysics
1-二月-2007Analysis of strain relaxation in GaAs/InGaAs/GaAs structures by spectroscopy of relaxation-induced statesChen, J. F.; Chiang, C. H.; Hsieh, P. C.; Wang, J. S.; 電子物理學系; Department of Electrophysics
30-八月-2010Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layerChen, J. F.; Chen, Ross C. C.; Chiang, C. H.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-九月-2010Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dotsChen, J. F.; Chen, Ross C. C.; Chiang, C. H.; Hsieh, M. C.; Chang, Y. C.; Chen, Y. F.; 電子物理學系; Department of Electrophysics
15-六月-2007Deep-level emissions in GaAsN/GaAs structures grown by metal organic chemical vapor depositionChen, J. F.; Ke, C. T.; Hsieh, P. C.; Chiang, C. H.; Lee, W. I.; Lee, S. C.; 電子物理學系; Department of Electrophysics
2007Demonstration of slow light via population oscillation in quantum dot VCSELXuan, R.; Chi, J. Y.; Peng, P. C.; Yang, H. P.; Chao, C. L.; Chen, J. F.; 電子物理學系; Department of Electrophysics
15-七月-2008Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dotsChen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-八月-2007Electron emission properties of relaxation-induced traps in InAs/GaAs quantum dots and the effect of electronic band structureChen, J. F.; Wang, J. S.; 電子物理學系; Department of Electrophysics
10-十二月-2008Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealingChen, J. F.; Yu, C. C.; Yang, C. H.; 電子物理學系; Department of Electrophysics
13-六月-2007Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wellsChen, J. F.; Hsieh, P. C.; Hsiao, R. S.; Wang, J. S.; Chi, J. Y.; 電子物理學系; Department of Electrophysics
14-一月-2013Exploration of water jet generated by Q-switched laser induced water breakdown with different depths beneath a flat free surfaceChen, Ross C. C.; Yu, Y. T.; Su, K. W.; Chen, J. F.; Chen, Y. F.; 電子物理學系; Department of Electrophysics
1-一月-2012How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?Chen, J. F.; Lin, Y. C.; Chiang, C. H.; Chen, Ross C. C.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-八月-2011Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimonyChiang, C. H.; Wu, Y. H.; Hsieh, M. C.; Yang, C. H.; Wang, J. F.; Chen, Ross C. C.; Chang, L.; Chen, J. F.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-三月-2009Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect stateChen, J. F.; Yang, C. H.; Hsu, R. M.; Wang, U. S.; 電子物理學系; Department of Electrophysics
15-一月-2011Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor depositionChiang, C. H.; Chen, K. M.; Wu, Y. H.; Yeh, Y. S.; Lee, W. I.; Chen, J. F.; Lin, K. L.; Hsiao, Y. L.; Huang, W. C.; Chang, E. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
14-十二月-2006The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layersShu, G. W.; Wang, C. K.; Wang, J. S.; Shen, J. L.; Hsiao, R. S.; Chou, W. C.; Chen, J. F.; Lin, T. Y.; Ko, C. H.; Lai, C. M.; 電子物理學系; Department of Electrophysics
15-一月-2010Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layersShu, G. W.; Wang, J. S.; Shen, J. L.; Hsiao, R. S.; Chen, J. F.; Lin, T. Y.; Wu, C. H.; Huang, Y. H.; Yang, T. N.; 電子物理學系; Department of Electrophysics
5-九月-2007Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dotsChen, J. F.; Wang, Y. Z.; Chiang, C. H.; Hsiao, R. S.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, T. W.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-十月-2009Spectral shape and broadening of emission from AlGaInP light-emitting diodesChen, N. C.; Lien, W. C.; Yang, Y. K.; Shen, C.; Wang, Y. S.; Chen, J. F.; 電子物理學系; Department of Electrophysics
5-六月-2006Strain relaxation and induced defects in InAsSb self-assembled quantum dotsChen, J. F.; Hsiao, R. S.; Huang, W. D.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
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