標題: Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots
作者: Chen, J. F.
Chen, Ross C. C.
Chiang, C. H.
Hsieh, M. C.
Chang, Y. C.
Chen, Y. F.
電子物理學系
Department of Electrophysics
公開日期: 15-九月-2010
摘要: The use of a differential capacitance technique for analyzing the effect of strain relaxation on the electronic energy band structure in relaxed InAs self-assembled quantum dots (QDs) is presented. Strain relaxation is shown to induce a deep defect state and compensate the ionized impurity in the bottom GaAs layer, leading to a double depletion width and a long emission time. An expression of capacitance at different frequency and voltage is derived for analyzing the experimental data. It has been shown that the relationship between the low-frequency and high-frequency capacitances can be well explained by a Schottky depletion model with a compensated concentration in the bottom GaAs layer. A simple expression is presented to account for the modulation of the free electrons in the top GaAs layer. This capacitance analysis shows a long low-energy tail for the electron ground state, suggesting not very uniform strain relaxation. The results of this study illustrate a carrier compensation effect of the defect state on the electronic energy band structure near the QDs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467938]
URI: http://dx.doi.org/10.1063/1.3467938
http://hdl.handle.net/11536/32189
ISSN: 0021-8979
DOI: 10.1063/1.3467938
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 108
Issue: 6
結束頁: 
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