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公開日期標題作者
1-八月-2004Annealing effect on boron high-energy-ion-implantation-induced defects inHsu, WC; Liang, MS; Chen, SC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate biasTsai, CW; Chen, MC; Ku, SH; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1999Barrier capabilities of selective chemical vapor deposited W films and WSiN/WSix/W stacked layers against Cu diffusionWang, MT; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Barrier characteristics of PECVD alpha-SiC : H dielectricsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS; 電子物理學系; Department of Electrophysics
1-七月-1998Barrier properties of very thin Ta and TaN layers against copper diffusionWang, MT; Lin, YC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2002Characteristics of copper films deposited on H(2)-plasma-treated TaN substrate by chemical vapor depositionLin, CL; Chen, PS; Chang, CL; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
-Chemical mechanical polishing for selective CVD-WWang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
-Chemical mechanical polishing for selective CVD-WWang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十月-1997Chemical mechanical polishing for selective CVD-WWang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十月-1997Chemical mechanical polishing for selective CVD-WWang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2002Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrateLin, CL; Chen, PS; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005Coherent control multiphoton processes in semiconductor saturable Bragg reflector with freezing phase algorithmChen, MC; Huang, JY; Chen, LJ; 光電工程學系; Department of Photonics
2000Common acoustical-poles/zeros modeling for 3D sound processingChen, MC; Hsieh, SF; 電信工程研究所; Institute of Communications Engineering
2001Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-九月-2004Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistorsChen, MC; Ku, SH; Chan, CT; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETsChan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2004Comparisons of link adaptation based scheduling algorithms for the WCDMA system with high speed downlink packet accessWang, LC; Chen, MC; 電信工程研究所; Institute of Communications Engineering
1-一月-2004Comparisons of link-adaptation-based scheduling algorithms for the WCDMA system with high-speed downlink packet accessWang, LC; Chen, MC; 電信工程研究所; Institute of Communications Engineering
1-六月-1999Computer-aided optimization of multi-pass turning operations for continuous forms on CNC lathesSu, CT; Chen, MC; 工業工程與管理學系; Department of Industrial Engineering and Management
1-八月-1999Copper chemical vapor deposition films deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilaneLin, PJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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