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公開日期標題作者
1-一月-2000Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n(+)-p structuresChen, JF; Wang, JS; Wang, PY; Chen, NC; Hsu, NC; 電子物理學系; Department of Electrophysics
1-七月-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-七月-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
17-四月-2000Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopyChen, JF; Wang, JS; Huang, MM; Chen, NC; 電子物理學系; Department of Electrophysics
1-十二月-1999Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperaturesChen, JF; Chen, NC; Wang, PY; Wang, JS; Weng, CM; 電子物理學系; Department of Electrophysics
1-二月-2000Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodesChen, JF; Wang, PY; Wang, JS; Tsai, CY; Chen, NC; 電子物理學系; Department of Electrophysics
23-九月-1996Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopyChen, JF; Chen, NC; Liu, HS; 電子物理學系; Department of Electrophysics
23-九月-1996Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopyChen, JF; Chen, NC; Liu, HS; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-七月-1996Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxyChen, JF; Chen, NC; Liu, HS; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-十一月-1996Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodesChen, JF; Chen, NC; Liu, HS; 電子物理學系; Department of Electrophysics
1-十一月-1996Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodesChen, JF; Chen, NC; Liu, HS; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-二月-2001Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodesChen, JF; Chen, NC; Wang, JS; Chen, YF; 電子物理學系; Department of Electrophysics
15-十月-1998Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structuresChen, JF; Wang, PY; Chen, NC; 電子物理學系; Department of Electrophysics
1-二月-1997Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structuresChen, JF; Chen, NC; Wang, PY; Tsai, MH; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-十月-2001Long-term photocapacitance decay behavior in undoped GaNChung, HM; Pan, YC; Chuang, WC; Chen, NC; Tsai, CC; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
2000Long-term photocapacitance decay behavior in undoped GaNChung, HM; Pan, YC; Chung, WC; Chen, NC; Tsai, CC; Chiang, CI; Lin, CH; Chang, H; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
2-三月-1998Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperatureChen, NC; Wang, PY; Chen, JF; 電子物理學系; Department of Electrophysics
1-七月-1998A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent annealLai, WK; Liu, HW; Juang, MH; Chen, NC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
18-十月-1999Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wellsChen, JF; Wang, PY; Tsai, CY; Wang, JS; Chen, NC; 電子物理學系; Department of Electrophysics
1-九月-1998Passivation of Cu by sputter-deposited Ta and reactively sputter-deposited Ta-nitride layersChuang, JC; Chen, NC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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