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1-五月-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-2006Effects of metal-doped indium-tin-oxide buffer layers in organic light-emitting devicesChen, TH; Wu, TJ; Chen, JY; Liou, Y; 顯示科技研究所; Institute of Display
1-六月-2005HiPRIME: Hierarchical and passivity preserved interconnect macromodeling engine for RLKC power deliveryLee, YM; Cao, YH; Chen, TH; Wang, JML; Chen, CCP; 電信工程研究所; Institute of Communications Engineering
12-十二月-2005Vanadium-doped indium tin oxide as hole-injection layer in organic light-emitting devicesChen, TH; Liou, Y; Wu, TJ; Chen, JY; 顯示科技研究所; Institute of Display
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