標題: | 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications |
作者: | Lai, YL Chang, EY Chang, CY Chen, TK Liu, TH Wang, SP Chen, TH Lee, CT 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-五月-1996 |
摘要: | A high-power-density dual-delta-doped AlGaAs/InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W, The 1 mu m gate-length HEMT exhibited a current density of 425 mA/mm at V-gs = 0.5 V, The maximum transconductance of the device was 270 mS/mm, The effective knee voltage was as low as 0.3 V, At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz, This is the highest power density of a dual-delta-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications. |
URI: | http://dx.doi.org/10.1109/55.491838 http://hdl.handle.net/11536/149175 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.491838 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 17 |
起始頁: | 229 |
結束頁: | 231 |
顯示於類別: | 期刊論文 |