標題: | 2-V-operation delta-doped power HEMT's for personal handy-phone systems |
作者: | Lai, YL Chang, EY Chang, CY Liu, TH Wang, SP Hsu, HT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-八月-1997 |
摘要: | A high-efficiency and high-power-density delta-doped AIGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by the power transistors for the PHS. The state-of-the-art results for the PHS operating at 2.0 V were achieved by the delta-doped power HEMT for the first time. |
URI: | http://dx.doi.org/10.1109/75.605483 http://hdl.handle.net/11536/149586 |
ISSN: | 1051-8207 |
DOI: | 10.1109/75.605483 |
期刊: | IEEE MICROWAVE AND GUIDED WAVE LETTERS |
Volume: | 7 |
起始頁: | 219 |
結束頁: | 221 |
顯示於類別: | 期刊論文 |