標題: | High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications |
作者: | Lai, YL Chang, EY Chang, CY Tai, MC Liu, TH Wang, SP Chuang, KC Lee, CT 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-九月-1997 |
摘要: | We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PBS standard signals, the 2.2-V-operation device with a gate width (W-g) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (P-adj) of -58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications, The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time. |
URI: | http://dx.doi.org/10.1109/55.622519 http://hdl.handle.net/11536/342 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.622519 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 18 |
Issue: | 9 |
起始頁: | 429 |
結束頁: | 431 |
顯示於類別: | 期刊論文 |