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公開日期標題作者
2-九月-2002Characteristics of deep levels in As-implanted GaN filmsLee, L; Lee, WC; Chung, HM; Lee, MC; Chen, WH; Chen, WK; Lee, HY; 電子物理學系; Department of Electrophysics
1-十二月-2002Characteristics of p-type GaN films doped with isoelectronic indium atomsChang, FC; Shen, KC; Chung, HM; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-七月-2001Comparative study of Schottky diode characteristics in Ni, Ta and Ni/Ta metal contact schemes on n-GaNChen, GL; Chang, FC; Chuang, WC; Chung, HM; Shen, KC; Chen, WH; Lee, MC; Chen, NK; 電子物理學系; Department of Electrophysics
15-五月-1997Crystalline structure changes in GaN films grown at different temperaturesLin, HC; Ou, J; Chen, WK; Chen, WH; Lee, MC; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-八月-2002Dependence of deep level concentrations on ammonia flow rate in n-type GaN filmsLee, L; Chang, FC; Chung, HM; Lee, MC; Chen, WH; Chen, WK; Huang, BR; 電子物理學系; Department of Electrophysics
2000Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxyHuang, HY; Shu, CK; Lin, WC; Liao, KC; Chuang, CH; Lee, MC; Chen, WH; Chen, WK; Lee, YY; 電子物理學系; Department of Electrophysics
15-三月-2001Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodesChen, GL; Chang, FC; Chung, WC; Huang, BR; Chen, WH; Lee, MC; Chen, WK; 電子物理學系; Department of Electrophysics
2000The electronic structure and optical properties of phosphorus implanted GaN filmsShu, CK; Lee, WH; Huang, HY; Chuang, CH; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
15-六月-2004Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursorsKe, WC; Huang, HY; Ku, CS; Yen, KH; Lee, L; Chen, WK; Chou, WC; Lee, MC; Chen, WH; Lin, WJ; Cheng, YC; Cherng, YT; 電子物理學系; Department of Electrophysics
2000Gallium K-edge EXAFS study of GaN : Mg filmsPan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-一月-2001Gallium K-edge x-ray absorption study on Mg-doped GaNPan, YC; Wang, SF; Lee, WH; Lee, MC; Chen, WK; Chen, WH; Jang, LY; Lee, JF; Chiang, CI; Chang, H; Wu, KT; Lin, DS; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
15-十二月-1997Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxyChen, WK; Pan, YC; Lin, HC; Ou, J; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
15-十二月-1997Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxyChen, WK; Pan, YC; Lin, HC; Ou, J; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-三月-2003Growth temperature reduction for isoelectronic As-doped GaNLee, WH; Huang, HY; Chen, WC; Lee, CF; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-九月-1999A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaNOu, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK; 電子物理學系; Department of Electrophysics
30-十月-2000Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor depositionHuang, HY; Lin, WC; Lee, WH; Shu, CK; Liao, KC; Chen, WK; Lee, MC; Chen, WH; Lee, YY; 電子物理學系; Department of Electrophysics
1-十月-2001Long-term photocapacitance decay behavior in undoped GaNChung, HM; Pan, YC; Chuang, WC; Chen, NC; Tsai, CC; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
2000Long-term photocapacitance decay behavior in undoped GaNChung, HM; Pan, YC; Chung, WC; Chen, NC; Tsai, CC; Chiang, CI; Lin, CH; Chang, H; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-四月-2001Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxyShu, CK; Chen, HH; Lee, WH; Pan, YC; Huang, HY; Ou, JN; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2000Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxyShu, CK; Lee, WH; Pan, YC; Huang, HY; Chen, HH; Chen, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
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