Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy

Title:	Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
Authors:	Chen, WK Pan, YC Lin, HC Ou, J Chen, WH Lee, MC 電子物理學系 Department of Electrophysics
Keywords:	InN;MOVPE
Issue Date:	15-Dec-1997
Abstract:	We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
URI:	http://hdl.handle.net/11536/145
ISSN:
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	36
Issue:	12B
Begin Page:	L1625
End Page:	L1627
Appears in Collections:	Articles

APA	Chen, W., Pan, Y., Lin, H., Ou, J., Chen, W., & Lee, M. (1997). Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS.
Bibtex	@article{Chen1997Growth, title={Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy}, author={Chen, WK and Pan, YC and Lin, HC and Ou, J and Chen, WH and Lee, MC}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS}, year={1997}, url={https://ir.lib.nycu.edu.tw/handle/11536/145}, }