標題: Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
作者: Chen, WK
Pan, YC
Lin, HC
Ou, J
Chen, WH
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: InN;MOVPE
公開日期: 15-Dec-1997
摘要: We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
URI: http://hdl.handle.net/11536/145
ISSN: 
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 36
Issue: 12B
起始頁: L1625
結束頁: L1627
Appears in Collections:Articles