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公開日期標題作者
1-一月-2018Achieving High-Scalability Negative Capacitance FETs with Uniform Sub-35 mV/dec Switch Using Dopant-Free Hafnium Oxide and Gate StrainFan, Chia-Chi; Cheng, Chun-Hu; Tu, Chun-Yuan; Liu, Chien; Chen, Wan-Hsin; Chang, Tun-Jen; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
5-十二月-2018Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion ChannelsLiu, Chien; Cheng, Chun-Hu; Lin, Ming-Huei; Shih, Yi-Jia; Hung, Yu-Wen; Fan, Chia-Chi; Chen, Hsuan-Han; Chen, Wan-Hsin; Hsu, Chih-Chieh; Shih, Bing-Yang; Chiu, Yu-Chien; Chou, Wu-Ching; Hsu, Hsiao-Hsuan; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-八月-2019Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxidesChang, Tun-Jen; Liu, Chien; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chen, Hsuan-Han; Chen, Wan-Hsin; Fan, Yu-Chi; Lee, Tsung-Ming; Lin, Chien-Liang; Mae, Jun; Zheng, Zhi-Wei; Cheng, Chun-Hu; Wang, Shih-An; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Program/Erase Speed and Data Retention Trade-Off in Negative Capacitance Versatile MemoryFan, Chia-Chi; Chiu, Yu-Chien; Liu, Chien; Liou, Guan-Lin; Lai, Wen-Wei; Chen, Yi-Ru; Chang, Tun-Jen; Chen, Wan-Hsin; Cheng, Chun-Hu; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
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