標題: | Achieving High-Scalability Negative Capacitance FETs with Uniform Sub-35 mV/dec Switch Using Dopant-Free Hafnium Oxide and Gate Strain |
作者: | Fan, Chia-Chi Cheng, Chun-Hu Tu, Chun-Yuan Liu, Chien Chen, Wan-Hsin Chang, Tun-Jen Chang, Chun-Yen 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2018 |
摘要: | For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO2 NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO2 NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO2 NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology. |
URI: | http://hdl.handle.net/11536/152029 |
ISBN: | 978-1-5386-4218-4 |
期刊: | 2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY |
起始頁: | 139 |
結束頁: | 140 |
顯示於類別: | 會議論文 |