標題: Achieving High-Scalability Negative Capacitance FETs with Uniform Sub-35 mV/dec Switch Using Dopant-Free Hafnium Oxide and Gate Strain
作者: Fan, Chia-Chi
Cheng, Chun-Hu
Tu, Chun-Yuan
Liu, Chien
Chen, Wan-Hsin
Chang, Tun-Jen
Chang, Chun-Yen
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2018
摘要: For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO2 NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO2 NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO2 NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology.
URI: http://hdl.handle.net/11536/152029
ISBN: 978-1-5386-4218-4
期刊: 2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY
起始頁: 139
結束頁: 140
Appears in Collections:Conferences Paper