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公開日期標題作者
1-三月-2019Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma TreatmentTsui, Bing-Yue; Cheng, Jung-Chien; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2018Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic ContactsCheng, Jung-Chien; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Failure Analysis on TiAl Metallization Process for Ohmic Contact on 4H-SiC pMOSFETHung, Chia-Lung; Cheng, Jung-Chien; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2010Multi-gate non-volatile memories with nanowires as charge storage materialTsui, Bing-Yue; Wang, Pei-Yu; Chen, Ting-Yeh; Cheng, Jung-Chien; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2017Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition AnnealingCheng, Jung-Chien; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2014Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion methodTsui, Bing-Yue; Cheng, Jung-Chien; Lee, Lurng-Shehng; Lee, Chwan-Ying; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2017Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiCTsui, Bing-Yue; Cheng, Jung-Chien; Yen, Cheng-Tyng; Lee, Chawn-Ying; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
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