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公開日期標題作者
1-二月-2007Analysis of strain relaxation in GaAs/InGaAs/GaAs structures by spectroscopy of relaxation-induced statesChen, J. F.; Chiang, C. H.; Hsieh, P. C.; Wang, J. S.; 電子物理學系; Department of Electrophysics
30-八月-2010Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layerChen, J. F.; Chen, Ross C. C.; Chiang, C. H.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-九月-2010Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dotsChen, J. F.; Chen, Ross C. C.; Chiang, C. H.; Hsieh, M. C.; Chang, Y. C.; Chen, Y. F.; 電子物理學系; Department of Electrophysics
15-六月-2007Deep-level emissions in GaAsN/GaAs structures grown by metal organic chemical vapor depositionChen, J. F.; Ke, C. T.; Hsieh, P. C.; Chiang, C. H.; Lee, W. I.; Lee, S. C.; 電子物理學系; Department of Electrophysics
1-二月-2020Development of a Parallel Explicit Finite-Volume Euler Equation Solver using the Immersed Boundary Method with Hybrid MPI-CUDA ParadigmKuo, F. A.; Chiang, C. H.; Lo, M. C.; Wu, J. S.; 機械工程學系; Department of Mechanical Engineering
15-七月-2008Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dotsChen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-一月-2012How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?Chen, J. F.; Lin, Y. C.; Chiang, C. H.; Chen, Ross C. C.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-八月-2011Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimonyChiang, C. H.; Wu, Y. H.; Hsieh, M. C.; Yang, C. H.; Wang, J. F.; Chen, Ross C. C.; Chang, L.; Chen, J. F.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-一月-2011Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor depositionChiang, C. H.; Chen, K. M.; Wu, Y. H.; Yeh, Y. S.; Lee, W. I.; Chen, J. F.; Lin, K. L.; Hsiao, Y. L.; Huang, W. C.; Chang, E. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
2009Photoluminescence and Raman studies of GaN films grown by MOCVDLuong Tien Tung; Lin, K. L.; Chang, E. Y.; Huang, W. C.; Hsiao, Y. L.; Chiang, C. H.; 材料科學與工程學系; Department of Materials Science and Engineering
5-九月-2007Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dotsChen, J. F.; Wang, Y. Z.; Chiang, C. H.; Hsiao, R. S.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, T. W.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
21-九月-2009Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layerWu, Y. H.; Chang, Li; Lin, P. Y.; Chiang, C. H.; Chen, J. F.; Chi, T. W.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
顯示 1 到 12 筆資料，總共 12 筆