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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
2000Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate biasChiang, LP; Tsai, CW; Wang, T; Liu, UC; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1998Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1999A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET'sWang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-八月-1997Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transientChiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Field enhanced oxide charge detrapping in n-MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1998Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current techniqueWang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Investigation of oxide charge trapping and detrapping in a n-MOSFETWang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1996Mechanisms and characteristics of oxide charge detrapping in n-MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1996A new technique to extract oxide trap time constants in MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFETWang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2000Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETsTsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFETWang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 13 筆資料，總共 13 筆