1. 目前位置：

瀏覽 的方式： 作者 Chiang, Pei-Wei

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
31-五月-2010Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2010Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2010Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structureFeng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2010Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structureFeng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2010A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structuresFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chen, Wei-Ren; Wang, Shin-Yuan; Chiang, Pei-Wei; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2010A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structuresFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chen, Wei-Ren; Wang, Shin-Yuan; Chiang, Pei-Wei; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010磁性FePt奈米點MIS電容的異值崩潰電壓的特性與分析江培維; Chiang, Pei-Wei; 張俊彥; Chang, Chun-Yen; 電子研究所
顯示 1 到 7 筆資料，總共 7 筆