瀏覽 的方式: 作者 Chiang, Shin-Chuan

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公開日期標題作者
6-三月-2017The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistorsSu, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming; 電子物理學系; Department of Electrophysics
10-四月-2017The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming; 電子物理學系; Department of Electrophysics
15-五月-2017The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structuresLiao, Po-Yung; Chang, Ting-Chang; Chen, Yu-Jia; Su, Wan-Ching; Chen, Bo-Wei; Chen, Li-Hui; Hsieh, Tien-Yu; Yang, Chung-Yi; Chang, Kuan-Chang; Zhang, Sheng-Dong; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; 電子物理學系; Department of Electrophysics
十二月-2016Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In-Ga-Zn-O thin-film transistorsLiao, Po-Yung; Chang, Ting-Chang; Su, Wan-Ching; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-Yi; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; 電子物理學系; Department of Electrophysics
26-六月-2017Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structuresLiao, Po-Yung; Chang, Ting-Chang; Su, Wan-Ching; Chen, Bo-Wei; Chen, Li-Hui; Hsieh, Tien-Yu; Yang, Chung-Yi; Chang, Kuan-Chang; Zhang, Sheng-Dong; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; 電子物理學系; Department of Electrophysics