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1-一月-2014Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant SegregationChen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; Wang, Pei-Yu; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
七月-2016Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETsHsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Chou, Chen-Han; Chen, Che-Wei; Chien, Hung-Pin; Chuang, Shang-Shiun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2016High Performance Ge Schottky PMOSFETs with Ternary-Phase AlloyHsu, Chung-Chun; Chi, Wei-Chun; Chou, Chen-Han; Chen, Che-Wei; Chien, Hung-Pin; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2014High-Performance Germanium p- and n-MOSFETs With NiGe Source/DrainChen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013利用源極與汲極工程改善鍺通道金氧半場效電晶體之特性錢弘彬; Chien, Hung-Pin; 簡昭欣; Chien, Chao-Hsin; 電子工程學系 電子研究所
顯示 1 到 5 筆資料，總共 5 筆