標題: High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain
作者: Chen, Che-Wei
Tzeng, Ju-Yuan
Chung, Cheng-Ting
Chien, Hung-Pin
Chien, Chao-Hsin
Luo, Guang-Li
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-2014
摘要: In this paper, we report Ge p- and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with NiGe source/drain (S/D) with high performance and low leakage current. The forward/reverse current ratio of the NiGe/n-Ge and NiGe/p-Ge junctions were similar to 10(5) and similar to 2 x 10(4) at vertical bar V vertical bar = +/- 1 V, respectively. Interface state densities Dit of Al2O3/GeO2/Ge stack is improved to be around 10(12)/eV(-1) cm(2) near the midgap after forming gas annealing; the gate-stack also shows excellent reliability under constant field stressing. Both p- and n-channel MOSFETs show sufficiently high ION/IOFF ratio. High driving current of similar to 9 and similar to 4 mu A/mu m at vertical bar V-GS - V-T vertical bar = +/-0.8 V and V-DS vertical bar = +/- V is obtained, respectively, for p- and n-MOSFETs. Moreover, S/D series resistance R-SD of the p- and n-MOSFET is reduced by similar to 25% and similar to 42% as compared with that of the transistors with conventional p/n junctions.
URI: http://dx.doi.org/10.1109/TED.2014.2327620
http://hdl.handle.net/11536/25391
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2327620
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 8
起始頁: 2656
結束頁: 2661
顯示於類別:期刊論文