標題: | Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking |
作者: | Hu, Vita Pi-Ho Fan, Ming-Long Su, Pin Chuang, Ching-Te 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Band-to-band-tunneling leakage;germanium;germanium-on-insulator (GeOI);stacking effect;ultra-thin-body (UTB) |
公開日期: | 1-二月-2012 |
摘要: | This letter indicates that the ultra-thin-body (UTB) germanium-on-insulator (GeOI) MOSFETs preserve the leakage reduction property of stacking devices, while the band-to-band-tunneling leakage of bulk Ge-channel devices cannot be reduced by stacking transistors. The seemingly contradictory behavior of the stack-effect factors is explained by the difference in the flows of band-to-band-tunneling hole fluxes for UTB GeOI and bulk Ge-channel devices and validated by TCAD mixed-mode simulations. At 300 K, the stack-effect factors of UTB GeOI MOSFETs range from 6.8 to 40 (N = 2) and from 12 to 142 (N = 3) at Vdd = 0.5-1V. As the temperature increases or Vdd decreases, the stack-effect factor for UTB GeOI devices decreases, while the stack-effect factor for bulk Ge-channel MOSFETs increases, because the subthreshold leakage current becomes more significant at higher temperature or lower voltage with respect to the band-to-band-tunneling leakage current. |
URI: | http://dx.doi.org/10.1109/LED.2011.2177955 http://hdl.handle.net/11536/15234 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2177955 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 2 |
起始頁: | 197 |
結束頁: | 199 |
顯示於類別: | 期刊論文 |