標題: | Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET |
作者: | Hu, Vita Pi-Ho Wu, Yu-Sheng Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Electrostatic integrity;germanium;germanium-on-nothing(GeON);Poisson's equation;silicon-on-nothing (SON);ultrathin body (UTB) |
公開日期: | 1-三月-2011 |
摘要: | This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (T(BI)) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined. |
URI: | http://dx.doi.org/10.1109/TNANO.2010.2041010 http://hdl.handle.net/11536/9162 |
ISSN: | 1536-125X |
DOI: | 10.1109/TNANO.2010.2041010 |
期刊: | IEEE TRANSACTIONS ON NANOTECHNOLOGY |
Volume: | 10 |
Issue: | 2 |
起始頁: | 325 |
結束頁: | 330 |
顯示於類別: | 期刊論文 |