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dc.contributor.authorHu, Vita Pi-Hoen_US
dc.contributor.authorWu, Yu-Shengen_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2014-12-08T15:11:57Z-
dc.date.available2014-12-08T15:11:57Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2010.2041010en_US
dc.identifier.urihttp://hdl.handle.net/11536/9162-
dc.description.abstractThis paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (T(BI)) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic integrityen_US
dc.subjectgermaniumen_US
dc.subjectgermanium-on-nothing(GeON)en_US
dc.subjectPoisson's equationen_US
dc.subjectsilicon-on-nothing (SON)en_US
dc.subjectultrathin body (UTB)en_US
dc.titleInvestigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFETen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2010.2041010en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume10en_US
dc.citation.issue2en_US
dc.citation.spage325en_US
dc.citation.epage330en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000290537500018-
dc.citation.woscount5-
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