瀏覽 的方式: 作者 Chien, W. C.

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公開日期標題作者
1-十月-2006Characterization of a nano-oxide layer in a pseudo spin valve by complex magneto-impedance spectroscopyChien, W. C.; Peng, T. Y.; Hsieh, L. C.; Lo, C. K.; Yao, Y. D.; 材料科學與工程學系; Department of Materials Science and Engineering
13-十一月-2006Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequencyChien, W. C.; Lo, C. K.; Hsieh, L. C.; Yao, Y. D.; Han, X. F.; Zeng, Z. M.; Peng, T. Y.; Lin, P.; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2007High frequency impedance inverse in MTJ junctionHsieh, L. C.; Huang, Y. W.; Han, X. F.; Zeng, Z. M.; Chien, W. C.; Peng, T. Y.; Lo, C. K.; Yao, Y. D.; 材料科學與工程學系; Department of Materials Science and Engineering
2009MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)Chien, W. C.; Chen, Y. C.; Chang, K. P.; Lai, E. K.; Yao, Y. D.; Lin, P.; Gong, J.; Tsai, S. C.; Hsieh, S. H.; Chen, C. F.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2007Oscillating voltage dependence of high-frequency impedance in magnetic tunneling junctionsChien, W. C.; Hsieh, L. C.; Peng, T. Y.; Lo, C. K.; Yao, Y. D.; Han, X. F.; Lin, P.; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-2010Unipolar Switching Behaviors of RTO WO(X) RRAMChien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
1-二月-2010Unipolar Switching Behaviors of RTO WOX RRAMChien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center