標題: | MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM) |
作者: | Chien, W. C. Chen, Y. C. Chang, K. P. Lai, E. K. Yao, Y. D. Lin, P. Gong, J. Tsai, S. C. Hsieh, S. H. Chen, C. F. Hsieh, K. Y. Liu, R. Lu, Chih-Yuan 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | resistive random access memory;RRAM;MLC;tungsten oxide;program verify algorithm;reliability |
公開日期: | 2009 |
摘要: | The multi-level operation of WOX based RRAM has been investigated. Improvement of our WOX process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated. |
URI: | http://hdl.handle.net/11536/134941 |
ISBN: | 978-1-4244-3761-0 |
期刊: | 2009 IEEE INTERNATIONAL MEMORY WORKSHOP |
起始頁: | 15 |
結束頁: | + |
顯示於類別: | 會議論文 |