標題: MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)
作者: Chien, W. C.
Chen, Y. C.
Chang, K. P.
Lai, E. K.
Yao, Y. D.
Lin, P.
Gong, J.
Tsai, S. C.
Hsieh, S. H.
Chen, C. F.
Hsieh, K. Y.
Liu, R.
Lu, Chih-Yuan
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: resistive random access memory;RRAM;MLC;tungsten oxide;program verify algorithm;reliability
公開日期: 2009
摘要: The multi-level operation of WOX based RRAM has been investigated. Improvement of our WOX process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.
URI: http://hdl.handle.net/11536/134941
ISBN: 978-1-4244-3761-0
期刊: 2009 IEEE INTERNATIONAL MEMORY WORKSHOP
起始頁: 15
結束頁: +
顯示於類別:會議論文