MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)

Title:	MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)
Authors:	Chien, W. C. Chen, Y. C. Chang, K. P. Lai, E. K. Yao, Y. D. Lin, P. Gong, J. Tsai, S. C. Hsieh, S. H. Chen, C. F. Hsieh, K. Y. Liu, R. Lu, Chih-Yuan 材料科學與工程學系 Department of Materials Science and Engineering
Keywords:	resistive random access memory;RRAM;MLC;tungsten oxide;program verify algorithm;reliability
Issue Date:	2009
Abstract:	The multi-level operation of WOX based RRAM has been investigated. Improvement of our WOX process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.
URI:	http://hdl.handle.net/11536/134941
ISBN:	978-1-4244-3761-0
Journal:	2009 IEEE INTERNATIONAL MEMORY WORKSHOP
Begin Page:	15
End Page:	+
Appears in Collections:	Conferences Paper