標題: | Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs |
作者: | Lai, Erh-Kun Chien, Wei-Chih Chen, Yi-Chou Hong, Tian-Jue Lin, Yu-Yu Chang, Kuo-Pin Yao, Yeong-Der Lin, Pang Horng, Sheng-Fu Gong, Jeng Tsai, Shih-Chang Lee, Ching-Hsiung Hsieh, Sheng-Hui Chen, Chun-Fu Shih, Yen-Hao Hsieh, Kuang-Yeu Liu, Rich Lu, Chih-Yuan 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2010 |
摘要: | A complementary metal oxide semiconductor (CMOS)-compatible WO(x) based resistive memory has been developed. The WO(x) memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (similar to 2 ns) and the programming voltage (< 1: 4 V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and 10(8)-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WO(x) resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications. (C) 2010 The Japan Society of Applied Physics |
URI: | http://hdl.handle.net/11536/6042 http://dx.doi.org/10.1143/JJAP.49.04DD17 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.49.04DD17 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 49 |
Issue: | 4 |
顯示於類別: | 期刊論文 |