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dc.contributor.authorChien, W. C.en_US
dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorChang, K. P.en_US
dc.contributor.authorLai, E. K.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.authorLin, P.en_US
dc.contributor.authorGong, J.en_US
dc.contributor.authorTsai, S. C.en_US
dc.contributor.authorHsieh, S. H.en_US
dc.contributor.authorChen, C. F.en_US
dc.contributor.authorHsieh, K. Y.en_US
dc.contributor.authorLiu, R.en_US
dc.contributor.authorLu, Chih-Yuanen_US
dc.date.accessioned2017-04-21T06:49:40Z-
dc.date.available2017-04-21T06:49:40Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-3761-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/134941-
dc.description.abstractThe multi-level operation of WOX based RRAM has been investigated. Improvement of our WOX process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectresistive random access memoryen_US
dc.subjectRRAMen_US
dc.subjectMLCen_US
dc.subjecttungsten oxideen_US
dc.subjectprogram verify algorithmen_US
dc.subjectreliabilityen_US
dc.titleMULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 IEEE INTERNATIONAL MEMORY WORKSHOPen_US
dc.citation.spage15en_US
dc.citation.epage+en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000272107600007en_US
dc.citation.woscount0en_US
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