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顯示 1 到 9 筆資料，總共 9 筆
公開日期標題作者
1-三月-2004Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gatesYu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-五月-2004Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrateWu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETsHuang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2003A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectricsYu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2003High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectricsDing, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2003Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 9 筆資料，總共 9 筆