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公開日期標題作者
2015An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal StructureYao, Jing-Neng; Lin, Yueh-Chin; Chuang, Yu-Lin; Huang, Yu-Xiang; Shih, Wang-Cheng; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics
七月-2016Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-六月-2012Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si SubstrateLin, Yueh-Chin; Kuo, Tza-Yao; Chuang, Yu-Lin; Wu, Chien-Hua; Chang, Chia-Hua; Huang, Kuan-Ning; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2012氮化鋁鎵/氮化鎵高電子遷移率電晶體無金金屬化製程之研究莊育霖; Chuang, Yu-Lin; 張翼; 馬哲申; Chang, Edward Yi; Ma, Jer-Shen; 照明與能源光電研究所
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