An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure

Title:	An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure
Authors:	Yao, Jing-Neng Lin, Yueh-Chin Chuang, Yu-Lin Huang, Yu-Xiang Shih, Wang-Cheng Sze, Simon M. Chang, Edward Yi 材料科學與工程學系光電系統研究所電子工程學系及電子研究所 Department of Materials Science and Engineering Institute of Photonic System Department of Electronics Engineering and Institute of Electronics
Issue Date:	2015
Abstract:	We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.
URI:	http://hdl.handle.net/11536/136108
ISBN:	978-1-4799-9928-6
ISSN:	1946-1550
Journal:	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
Begin Page:	394
End Page:	397
Appears in Collections:	Conferences Paper