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公開日期標題作者
1-十二月-2019Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD TechnologyChung, Yun-Yan; Lu, Kuan-Cheng; Cheng, Chao-Ching; Li, Ming-Yang; Lin, Chao-Ting; Li, Chi-Feng; Chen, Jyun-Hong; Lai, Tung-Yen; Li, Kai-Shin; Shieh, Jia-Min; Su, Sheng-Kai; Chiang, Hung-Li; Chen, Tzu-Chiang; Li, Lain-Jong; Wong, H-S Philip; Jian, Wen-Bin; Chien, Chao-Hsin; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-二月-2019Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial LayerTsai, Yi-He; Chou, Chen-Han; Chung, Yun-Yan; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
1-十月-2019Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line MeasurementChung, Yun-Yan; Li, Chi-Feng; Lin, Chao-Ting; Ho, Yen-Teng; Chien, Chao-Hsin; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrateCheng, Chao-Ching; Chung, Yun-Yan; Li, Ming-Yang; Lin, Chao-Ting; Li, Chi-Feng; Chen, Jyun-Hong; Lai, Tung-Yen; Li, Kai-Shin; Shieh, Jia-Min; Su, Sheng-Kai; Chiang, Hung-Li; Chen, Tzu-Chiang; Li, Lain-Jong; Wong, H-S Philip; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Study of the Band Alignment between Atomic-Layer-Deposited High-kappa Dielectrics and MoS2 FilmChung, Yun-Yan; Tsai, Ming-Li; Ho, Yen-Teng; Tseng, Yuan-Chieh; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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