標題: Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement
作者: Chung, Yun-Yan
Li, Chi-Feng
Lin, Chao-Ting
Ho, Yen-Teng
Chien, Chao-Hsin
電子工程學系及電子研究所
國際半導體學院
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: TLM;metal-2D material contact;MoS2;TMD;edge contact resistivity;Nb-doped;two-step sulfurization
公開日期: 1-十月-2019
摘要: This study determined the top (vertical) and edge (horizontal) resistivities of metal-MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, rho(C_edge), was almost two orders of magnitude lower than the top contact resistivity, rho(C_top). Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal-two-dimensional material contact.
URI: http://dx.doi.org/10.1109/LED.2019.2935538
http://hdl.handle.net/11536/153001
ISSN: 0741-3106
DOI: 10.1109/LED.2019.2935538
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 40
Issue: 10
起始頁: 1662
結束頁: 1665
顯示於類別:期刊論文