完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chung, Yun-Yan | en_US |
dc.contributor.author | Li, Chi-Feng | en_US |
dc.contributor.author | Lin, Chao-Ting | en_US |
dc.contributor.author | Ho, Yen-Teng | en_US |
dc.contributor.author | Chien, Chao-Hsin | en_US |
dc.date.accessioned | 2019-12-13T01:09:53Z | - |
dc.date.available | 2019-12-13T01:09:53Z | - |
dc.date.issued | 2019-10-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2019.2935538 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153001 | - |
dc.description.abstract | This study determined the top (vertical) and edge (horizontal) resistivities of metal-MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, rho(C_edge), was almost two orders of magnitude lower than the top contact resistivity, rho(C_top). Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal-two-dimensional material contact. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | TLM | en_US |
dc.subject | metal-2D material contact | en_US |
dc.subject | MoS2 | en_US |
dc.subject | TMD | en_US |
dc.subject | edge contact resistivity | en_US |
dc.subject | Nb-doped | en_US |
dc.subject | two-step sulfurization | en_US |
dc.title | Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2019.2935538 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 40 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 1662 | en_US |
dc.citation.epage | 1665 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000489740400024 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |