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公開日期標題作者
1-一月-2002Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devicesWang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2000Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technologyWang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2001Interface induced uphill diffusion of boron: An effective approach for ultrashallow junctionWang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2005Modeling mechanical stress effect on dopant diffusion in scaled MOSFETsSheu, YM; Yang, SJ; Wang, CC; Chang, CS; Huang, LP; Huang, TY; Chen, MJ; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2004Separation of channel backscattering coefficients in nanoscale MOSFETsChen, MJ; Huang, HT; Chou, YC; Chen, RT; Tseng, YT; Chen, PN; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Temperature dependent channel backscattering coefficients in nanoscale MOSFETsChen, MJ; Huang, HT; Huang, KC; Chen, PN; Chang, CS; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆