Temperature dependent channel backscattering coefficients in nanoscale MOSFETs

Abstract

The ratio of the mean-free-path to the critical length near the low-field source is key to channel backscattering characteristics in nanoFETs. To extract it, we perform temperature experiment from -40 degreesC to 75 degreesC on 17 Angstrom thick gate oxide MOSFETs with varying mask gate lengths down to 75 nm. In this paper we report that once the saturation drain current is measured against temperature, the mean-free-path lambda with respect to the critical length l can readily be assessed at pecific temperature. Dependencies on gate length, drain voltage, and gate voltage are then established that further enable nanoFETs scaling projections. The temperature dependent version of existing backscattering model is derived in this work.