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公開日期標題作者
21-十二月-2016"Embedded Emitters": Direct bandgap Ge nanodots within SiO2Kuo, M. H.; Chou, S. K.; Pan, Y. W.; Lin, S. D.; George, T.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-五月-2016Geometry-dependent phase, stress state and electrical properties in nickel-silicide nanowiresWang, C. C.; Lai, W. T.; Hsiao, Y. Y.; Chen, I. H.; George, T.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2015The pivotal role of oxygen interstitials in the dynamics of growth and movement of germanium nanocrystallitesChen, K. H.; Wang, C. C.; Lai, W. T.; George, T.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platformLiao, P. H.; Kuo, M. H.; Tien, C. W.; Chang, Y. L.; Hong, P. Y.; George, T.; Lin, H. C.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
18-五月-2018Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devicesLiao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-2017'Symbiotic' semiconductors: unusual and counter-intuitive Ge/Si/O interactionsGeorge, T.; Li, P. W.; Chen, K. H.; Peng, K. P.; Lai, W. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2019Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheresChen, C. T.; Peng, K. P.; George, T.; Lin, H. C.; Li, Pei-Wen; 交大名義發表; National Chiao Tung University
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