瀏覽 的方式: 作者 Gong, J.

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1-一月-2017The Impact of TiN Barrier on the NBTI in an Advanced High-k Metal-gate p-channel MOSFETHuang, D. -C.; Hsieh, E. Ray; Gong, J.; Huang, C. -F.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)Chien, W. C.; Chen, Y. C.; Chang, K. P.; Lai, E. K.; Yao, Y. D.; Lin, P.; Gong, J.; Tsai, S. C.; Hsieh, S. H.; Chen, C. F.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-2010Unipolar Switching Behaviors of RTO WO(X) RRAMChien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
1-二月-2010Unipolar Switching Behaviors of RTO WOX RRAMChien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
2008整合型溝渠式功率接面場效電晶體與蕭特基阻障二極體劉莒光; Liu, Chu-Kuang; 羅正忠; 龔正; Lou, J. C.; Gong, J.; 理學院應用科技學程