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公開日期標題作者
1-一月-2018Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C ImplantationBorland, John; Chaung, Shang-Shiun; Tseng, Tseung-Yuen; Lee, Yao-Jen; Joshi, Abhijeet; Basol, Bulent; Kuroi, Takashi; Goodman, Gary; Khapochkima, Nadya; Buyuklimanli, Temel; 交大名義發表; National Chiao Tung University
1-一月-2018Boosting Ge-epi P-well Mobility & Crystal Quality with Si or Sn Implantation and Melt AnnealingBorland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhij Eet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Tabata, Toshiyuki; Huet, Karim; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel; 交大名義發表; 電機工程學系; National Chiao Tung University; Department of Electrical and Computer Engineering
1-一月-2019Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain EngineeringBorland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhijeet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel; 交大名義發表; National Chiao Tung University
1-一月-2017Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact ResistanceBorland, John; Lee, Yao-Jen; Chuang, Shang-Shiun; Tseng, Tseung-Yuen; Liu, Chee-Wee; Huet, Karim; Goodman, Gary; Marino, John; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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