國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Hong, JW

顯示 1 到 7 筆資料，總共 7 筆

公開日期	標題	作者
22-七月-1999	Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh	Chen, YA; Hsu, ML; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1996	Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer	Chen, YA; Chen, JK; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1997	Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions	Jen, TS; Shin, NF; Laih, LH; Chen, YA; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-七月-1998	Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H	Chen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997	Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer	Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997	Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer	Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1997	Porous silicon light-emitting diode with tunable color	Chen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics

顯示 1 到 7 筆資料，總共 7 筆