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公開日期標題作者
1-五月-2020Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage CurrentJia, Xingyu; Chen, Sung-Wen Huang; Liu, Yajin; Hou, Xu; Zhang, Yonghui; Zhang, Zi-Hui; Kuo, Hao-Chung; 光電工程學系; Department of Photonics
10-六月-2019Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodesKou, Jianquan; Shen, Chih-Chiang; Shao, Hua; Che, Jiamang; Hou, Xu; Chu, Chunshuang; Tian, Kangkai; Zhang, Yonghui; Zhang, Zi-Hui; Kuo, Hao-Chung; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
1-一月-1970Polarization Engineering to Manipulate the Breakdown Voltage for GaN-Based PIN DiodesHou, Xu; Chen, Xin; Jia, Xingyu; Liu, Yajin; Zhang, Yonghui; Zhang, Zi-Hui; Kuo, Hao-Chung; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
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