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公開日期標題作者
1-九月-2006HfSiON n-MOSFETs using low-work function HfSi chi gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2007High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETsHung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO2 and HfSiON gate dielectricsLin, We-Liang; Lee, Yao-Jen; Lo, Wen-Cheng; Chen, King-Sheng; Hou, Y. T.; Lin, K. C.; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
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